Spin lifetimes and strain-controlled spin precession of drifting electrons in zinc blende type semiconductors

摘要

We study the transport of spin polarized electrons in n-GaAs using spatiallyresolved continuous wave Faraday rotation. From the measured steady statedistribution, we determine spin relaxation times under drift conditions and, inthe presence of strain, the induced spin splitting from the observed spinprecession. Controlled variation of strain along [110] allows us to deduce thedeformation potential causing this effect, while strain along [100] has noeffect. The electric field dependence of the spin lifetime is explainedquantitatively in terms of an increase of the electron temperature.